Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition

Jyh-Cheng Chen, K. Xie, J. F. Chen, Wei-Kuo Chen, C. R. Wie, P. L. Liu

研究成果: Comment/debate

2 引文斯高帕斯（Scopus）

原文	English
頁（從 - 到）	3119-3120
頁數	2
期刊	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
卷	7
發行號	5
DOIs	https://doi.org/10.1116/1.576323
出版狀態	Published - 9月 1989

存取文件

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title = "Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition",

author = "Jyh-Cheng Chen and K. Xie and Chen, {J. F.} and Wei-Kuo Chen and Wie, {C. R.} and Liu, {P. L.}",

year = "1989",

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language = "English",

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T1 - Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition

AU - Chen, Jyh-Cheng

AU - Xie, K.

AU - Chen, J. F.

AU - Chen, Wei-Kuo

AU - Wie, C. R.

AU - Liu, P. L.

PY - 1989/9

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M3 - Comment/debate

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SN - 0734-2101

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SP - 3119

EP - 3120

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -