Ion-beam induced metastable Pt 2 Si 3 phase. I. Formation, structure, and properties

B. Y. Tsaur*, J. W. Mayer, King-Ning Tu

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53 引文 斯高帕斯(Scopus)

摘要

A metastable silicide phase with a composition of Pt 2 Si 3 has been obtained by using ion-beam mixing techniques. To form the phase, a thin PtSi film on a Si substrate was first converted into a Si-rich amorphous Pt-Si alloy by implantation with energetic ions through the PtSi-Si interface. The amorphous alloy then transformed into the metastable crystalline phase upon post annealing at 350-500°C. X-ray diffraction analysis showed that the Pt 2 Si 3 phase has a hexagonal crystal structure with lattice parameters a=3.841 Å and c=11.924 Å and there are ten atoms per unit cell. The phase was unstable at temperatures above 550°C and transformed back to PtSi and Si. The metastable Pt 2 Si 3 phase was found to exhibit a superconducting transition onset at about 4.2°K and becomes completely superconductive below 3.6°K.

原文English
頁(從 - 到)5326-5333
頁數8
期刊Journal of Applied Physics
51
發行號10
DOIs
出版狀態Published - 1 12月 1980

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