This work demonstrates the versatility of amorphous InZnSnO (a-IZTO) oxide semiconductor, covering from the thin film transistor (TFT) to the resistive random accessmemory (RRAM) technologies for system-on-panel applications. The high-performance a-IZTO TFTs with effective carry mobility of 39.6 cm2/V s, threshold voltage of -0.28 V and subthreshold swing of 0.25 decade/V are obtained in this study. Thermal post-annealing also was used to provide stable electrical characteristics with a few threshold voltage shift after positive gate bias stress. On the other hand, the RRAM device with a-IZTO film acting as active layer exhibits superior bipolar resistive switching characteristics. The wide (>10) resistance window and the stability endurance of hundreds cycle are achieved. Both of the proposed a-IZTO TFT and RRAM have promising potential to be integrated with a-IZTO-based periphery electronic circuits for flat-panel display applications.
|頁（從 - 到）||Q3054-Q3057|
|期刊||ECS Journal of Solid State Science and Technology|
|出版狀態||Published - 1月 2014|