InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors

Ram Narayan Chauhan, Nidhi Tiwari, Ya-Hsiang Tai, Po-Tsun Liu, Han Ping D. Shieh

研究成果: Conference contribution同行評審

摘要

A thin film transistor with bi-stack layers of silicon incorporated InZnO (IZO:Si) on InZnO layer is proposed to enhance device performance and negative photo-biased stability. The resulting device realizes as enhancement mode (Vth ∼ 1.30 V) with mobility of 15.3 cm2/Vs, sub-threshold swing of 0.20 V/decade, better stab ility - 0.75V.

原文English
主出版物標題22nd International Display Workshops, IDW 2015
發行者International Display Workshops
頁面142-143
頁數2
ISBN(電子)9781510845503
出版狀態Published - 2015
事件22nd International Display Workshops, IDW 2015 - Otsu, 日本
持續時間: 9 12月 201511 12月 2015

出版系列

名字Proceedings of the International Display Workshops
1
ISSN(列印)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
國家/地區日本
城市Otsu
期間9/12/1511/12/15

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