(INVITED) SILICIDE CONTACT FOR SHALLOW JUNCTION DEVICES.

King-Ning Tu*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed.

原文English
頁(從 - 到)147-151
頁數5
期刊Japanese Journal of Applied Physics
22
DOIs
出版狀態Published - 1 1月 1983

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