摘要
This work reports for the first time a novel In0.2Ga 0.8AsSb/GaAs heterostructure doped-channel field-effect transistor (DCFET) grown by the molecular beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the DCFET device has been effectively improved by introducing surfactant-like Sb atoms during the growth of the Si-doped InGaAs channel layer. The improved device characteristics include the peak extrinsic transconductance (gm, max) of 161.5 mS mm-1, the peak drain-source saturation current density (I DSS, max) of 230 mA mm-1, the gate-voltage swing (GVS) of 1.65 V, the cutoff frequency (fT) of 12.5 GHz and the maximum oscillation frequency (fmax) of 25 GHz at 300 K with the gate dimensions of 1.2 × 200 νm2. The proposed design has also shown a stable thermal threshold coefficient (∂Vth/∂T) of -0.7 mV K-1.
原文 | English |
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文章編號 | 045012 |
頁(從 - 到) | 1-6 |
頁數 | 6 |
期刊 | Semiconductor Science and Technology |
卷 | 23 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 1 4月 2008 |