Investigation on thin-film-transistors with a transparent material zinc-oxide layer with DC sputter deposition system

Yi Teh Chou*, Chen Shuo Huang, S. J. Shiau, Po-Tsun Liu, Li Wei Chu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We have successfully developed a transparent thin film transistor (TTFT) with a novel material Zinc Oxide (ZnO) as semiconductor layer. The use of ZnO-based material can increases the field-effect mobility of TFT devices, the opening of AMLCD panel and releases the issue of photo-excited leakage current. In this work, the ZnO film was deposited in DC glow discharge plasma sputter system which is suitable for industrial technique and novel method in ZnO-base TFT process. With changing mixture gas flow, we can adjust the rate of Zn/ZnO mixture, Zn1+xO, and ZnO and get a suitable condition for TFT device. FTIR, XRD, SEM and AFM were utilized to analyze the characteristic of ZnO films.

原文English
主出版物標題IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面512-514
頁數3
出版狀態Published - 7月 2007
事件International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, 台灣
持續時間: 3 7月 20076 7月 2007

出版系列

名字IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
國家/地區台灣
城市Taipei
期間3/07/076/07/07

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