Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrO_xGe FinFET Inverters

Keyphrases

• Fin Field-effect Transistor (FinFET) 100%
• Inverter 100%
• Si CMOS 33%
• V(V) 33%
• Voltage Gain 33%
• Etching Technology 33%
• Negative Shift 33%
• Positive Shifts 33%
• Transfer Curves 33%
• Neutral Beam Etching 33%
• HfZrOx 33%
• Low Damage 33%
• Cyclic Operation 33%
• Voltage Transfer 33%

Engineering

• Inverter 100%
• Dominated Mechanism 33%

Material Science

• Ferroelectric Material 100%