Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOxGe FinFET Inverters

Tzu Chieh Hong, Chun-Jung Su, Yao Jen Lee, Yi-Ming Li, Seiji Samukawa, Tien-Sheng Chao

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.

原文English
主出版物標題6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面241-243
頁數3
ISBN(電子)9781665421775
DOIs
出版狀態Published - 2022
事件6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
持續時間: 6 3月 20229 3月 2022

出版系列

名字6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
國家/地區Japan
城市Virtual, Online
期間6/03/229/03/22

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