@inproceedings{61fb12564dda4575970d33f19ef760ab,
title = "Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOxGe FinFET Inverters",
abstract = "In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.",
keywords = "ferroelectric, FinFET, Ge CMOS, NBE",
author = "Hong, {Tzu Chieh} and Chun-Jung Su and Lee, {Yao Jen} and Yi-Ming Li and Seiji Samukawa and Tien-Sheng Chao",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",
year = "2022",
doi = "10.1109/EDTM53872.2022.9798106",
language = "English",
series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "241--243",
booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
address = "美國",
}