Investigation on Germanium Transistors with HfO_x-Based Gate Stacks for CMOS Operations

Keyphrases

• Transistor 100%
• Gate Stack 100%
• Germanium 100%
• HfOx 100%
• Voltage Transfer Characteristics 60%
• HfO2 40%
• Interface States 20%
• High Drive 20%
• Charge Trapping 20%
• CMOS Inverter 20%
• Device Characteristics 20%
• Characteristic Behavior 20%
• Logic Circuit 20%
• Negative Voltage 20%
• Device Operation 20%
• Device Optimization 20%
• Polarization Effect 20%
• Germanium MOSFET 20%
• Positive Shifts 20%
• Interface Dipole 20%
• Systematical Analysis 20%
• Operation Analysis 20%

Material Science

• Transistor 100%
• Germanium 100%
• Electronic Circuit 50%
• Charge Trapping 50%

Engineering

• Gate Stack 100%
• Interface State 20%
• Current Drive 20%
• Logic Circuit 20%
• Polarization Effect 20%
• Inverter 20%