Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse

Chao Yang Ke*, Ming Dou Ker

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The ESD robustness of 20-V GGNMOS and GDPMOS fabricated by the 4H-SiC process was investigated by the 100-ns transmission-line-pulse (TLP) pulse. The experimental results show that, under the test of breakdown mode, there is no correlation between the ESD robustness and the number of fingers. However, under the test of forward mode, the ESD robustness can be enhanced effectively by increasing the number of fingers. When the ESD current is conducted in the forward mode through the body diode of GGNMOS or GDPMOS, the ESD robustness can be effectively enhanced. Hence, the concept and schematic diagram of the whole-chip ESD protection are proposed to achieve sufficient ESD robustness of SiC ICs. Furthermore, the power-rail ESD clamp is an indispensable element to achieve sufficient ESD robustness.

原文English
主出版物標題2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337136
DOIs
出版狀態Published - 2023
事件10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 - Charlotte, United States
持續時間: 4 12月 20236 12月 2023

出版系列

名字2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

Conference

Conference10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
國家/地區United States
城市Charlotte
期間4/12/236/12/23

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