Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

Chao Yang Ke, Wei Cheng Wang, Ming Dou Ker, Chih Yi Yang, Edward Yi Chang

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

原文English
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態Published - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
持續時間: 17 4月 202320 4月 2023

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區Taiwan
城市Hsinchu
期間17/04/2320/04/23

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