Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

Chao Yang Ke; Wei Cheng Wang; Ming Dou Ker; Chih Yi Yang; Edward Yi Chang

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

Chao Yang Ke, Wei Cheng Wang, Ming Dou Ker, Chih Yi Yang, Edward Yi Chang

研究成果: Conference contribution › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

原文	English
主出版物標題	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426
出版狀態	Published - 2023
事件	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, 台灣持續時間: 17 4月 2023 → 20 4月 2023

出版系列

名字	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區	台灣
城市	Hsinchu
期間	17/04/23 → 20/04/23

存取文件

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

其它文件與鏈接

Link to publication in Scopus

引用此

Ke, C. Y., Wang, W. C., Ker, M. D., Yang, C. Y., & Chang, E. Y. (2023). Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Ke, Chao Yang ; Wang, Wei Cheng ; Ker, Ming Dou 等. / Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

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title = "Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement",

abstract = "The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.",

author = "Ke, {Chao Yang} and Wang, {Wei Cheng} and Ker, {Ming Dou} and Yang, {Chih Yi} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426",

language = "English",

series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

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Ke, CY, Wang, WC, Ker, MD, Yang, CY & Chang, EY 2023, Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, 台灣, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. / Ke, Chao Yang; Wang, Wei Cheng; Ker, Ming Dou 等.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

研究成果: Conference contribution › 同行評審

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T1 - Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

AU - Ke, Chao Yang

AU - Wang, Wei Cheng

AU - Ker, Ming Dou

AU - Yang, Chih Yi

AU - Chang, Edward Yi

PY - 2023

Y1 - 2023

N2 - The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

AB - The component-level ESD robustness of 1200-V D-Mode (depletion-mode) GaN (gallium nitride) MIS-HEMTs (metal insulator semiconductor-high electron mobility transistor) was investigated in this work. Experimental results showed that HBM levels were poor in the testing condition with HBM ESD zapping from Gate to Source, even if the device size was as large as 120000 μ m. Further studies on the correlation between TLP failure currents and HBM ESD levels were conducted. It was found that HBM ESD test was the suitable method to evaluate the ESD immunity instead of TLP measurement owing to the miscorrelation between TLP failure currents and HBM ESD levels.

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DO - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

M3 - Conference contribution

AN - SCOPUS:85163037498

T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023

Y2 - 17 April 2023 through 20 April 2023

ER -

Ke CY, Wang WC, Ker MD, Yang CY, Chang EY. Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134426

Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

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