One-time programmable (OTP) memory is essential to the security and gaming industries because of its 'write once, read many' capability. This device supports N-metal-oxide-semiconductor polycrystalline-silicon junctionless gate-all-around (GAA) nanowire transistor technology and can perform multistate antifuse. It is capable of functioning in four states instead of in the standard two states (open/short). Furthermore, the states can be read as fully open (0, 0), drain-gate breakdown (0, 1), source-gate breakdown (1, 0), and full breakdown (1, 1) states. The antifuse is formed from the oxide breakdown between the gate and the source or drain (S/D). Moreover, because multiple samples have been successfully produced, its information can be displayed as a chart or table to instantly convey information about the current device's state to programmers by reading the S/D current.
|頁（從 - 到）||6118-6123|
|期刊||IEEE Transactions on Electron Devices|
|出版狀態||Published - 1 12月 2021|