Investigation of Two Bits with Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP

Chen Feng Chang, Chiuan Huei Shen, Dong Ru Hsieh, Zong Han Lu, Cheng Chen Lin, Tien Sheng Chao*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

One-time programmable (OTP) memory is essential to the security and gaming industries because of its 'write once, read many' capability. This device supports N-metal-oxide-semiconductor polycrystalline-silicon junctionless gate-all-around (GAA) nanowire transistor technology and can perform multistate antifuse. It is capable of functioning in four states instead of in the standard two states (open/short). Furthermore, the states can be read as fully open (0, 0), drain-gate breakdown (0, 1), source-gate breakdown (1, 0), and full breakdown (1, 1) states. The antifuse is formed from the oxide breakdown between the gate and the source or drain (S/D). Moreover, because multiple samples have been successfully produced, its information can be displayed as a chart or table to instantly convey information about the current device's state to programmers by reading the S/D current.

原文English
頁(從 - 到)6118-6123
頁數6
期刊IEEE Transactions on Electron Devices
68
發行號12
DOIs
出版狀態Published - 1 12月 2021

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