Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

Ta Shan Chang; Ting Chang Chang; Po-Tsun Liu; Shu Wei Tsao; Feng Sheng Yeh

doi:10.1016/j.tsf.2007.08.014

Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

Ta Shan Chang, Ting Chang Chang^*, Po-Tsun Liu, Shu Wei Tsao, Feng Sheng Yeh

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光電工程學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 °C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work.

原文	English
頁（從 - 到）	374-377
頁數	4
期刊	Thin Solid Films
卷	516
發行號	2-4
DOIs	https://doi.org/10.1016/j.tsf.2007.08.014
出版狀態	Published - 3 12月 2007

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10.1016/j.tsf.2007.08.014

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@article{91a6c835a0b8441286b49f05dd73b4ba,

title = "Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD",

abstract = "Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 °C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work.",

keywords = "HSQ, Low-k, Passivation, TFT",

author = "Chang, {Ta Shan} and Chang, {Ting Chang} and Po-Tsun Liu and Tsao, {Shu Wei} and Yeh, {Feng Sheng}",

year = "2007",

month = dec,

day = "3",

doi = "10.1016/j.tsf.2007.08.014",

language = "English",

volume = "516",

pages = "374--377",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

AU - Chang, Ta Shan

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Tsao, Shu Wei

AU - Yeh, Feng Sheng

PY - 2007/12/3

Y1 - 2007/12/3

N2 - Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 °C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work.

AB - Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 °C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work.

KW - HSQ

KW - Low-k

KW - Passivation

KW - TFT

UR - http://www.scopus.com/inward/record.url?scp=36049039177&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.08.014

DO - 10.1016/j.tsf.2007.08.014

M3 - Article

AN - SCOPUS:36049039177

SN - 0040-6090

VL - 516

SP - 374

EP - 377

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2-4

ER -

Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

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