This work reports a comprehensive investigation on the negative-capacitance (NC) related ferroelectric FET (FE-FET) with Hf1-x Zrx O2 (HZO) with different sweeping sequences. Devices of the planar capacitor and Gate-All-Around (GAA) with 5.3 × 9 nm2 poly-Silicon nanowire (NW) channel were compared in detail. Despite the fact that PMA of 700°C exhibits the best ferroelectricity for the MFM capacitor, the results of NW FE-FETs are quite different owing to the stress-sensitive crystallization of HZO. We found the ZrO2, seedlayer, can significantly improve the crystallinity of HZO even with PMA-free. An internal-metal-gate (IMG) and/or 2-layer-stacked channel for GAA were demonstrated to improve performance. The inserted TiN as the IMG is found to gain superior S.S.avg of 43.85 mV/decade with 104 of ID. The Ion of GAA can be further boosted by the stacked channel. In addition, the dipole polarization of FE is used to explain the results of examining different sweeping sequences.