Investigation of the Impact of Internal Metal Gate - From MFM Capacitors to Two-Layer-Stacked GAA Poly-Si NW FE-FETs

Shen Yang Lee*, Han Wei Chen, Chun Chih Chung, Chiuan Huei Shen, Po Yi Kuo, Yu En Huang, Hsin Yu Chen, Tien Sheng Chao

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This work reports a comprehensive investigation on the negative-capacitance (NC) related ferroelectric FET (FE-FET) with Hf1-x Zrx O2 (HZO) with different sweeping sequences. Devices of the planar capacitor and Gate-All-Around (GAA) with 5.3 × 9 nm2 poly-Silicon nanowire (NW) channel were compared in detail. Despite the fact that PMA of 700°C exhibits the best ferroelectricity for the MFM capacitor, the results of NW FE-FETs are quite different owing to the stress-sensitive crystallization of HZO. We found the ZrO2, seedlayer, can significantly improve the crystallinity of HZO even with PMA-free. An internal-metal-gate (IMG) and/or 2-layer-stacked channel for GAA were demonstrated to improve performance. The inserted TiN as the IMG is found to gain superior S.S.avg of 43.85 mV/decade with 104 of ID. The Ion of GAA can be further boosted by the stacked channel. In addition, the dipole polarization of FE is used to explain the results of examining different sweeping sequences.

原文English
主出版物標題2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面124-125
頁數2
ISBN(電子)9781728142326
DOIs
出版狀態Published - 8月 2020
事件2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
持續時間: 10 8月 202013 8月 2020

出版系列

名字2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
國家/地區Taiwan
城市Hsinchu
期間10/08/2013/08/20

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