Investigation of the electrical properties and reliability of amorphous SiCN

C. W. Chen, T. C. Chang*, Po-Tsun Liu, T. M. Tsai, H. C. Huang, J. M. Chen, C. H. Tseng, C. C. Liu, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Conference article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Amorphous SiCN (a-SiCN) is a candidate for barrier dielectric and has lower dielectric constant (k ∼ 5) relative to the commonly used barrier SiN (k ∼ 7). In this study, we investigate the leaky behavior and barrier characteristics of a-SiCN (k: 4 ∼ 5) doped with different nitrogen concentration. The leaky behavior of a-SiCN is Poole-Frenkel at high electric field. This is similar to SiN. Thermal stability of a-SiCN films is good enough to meet the prescription in back-end-of-line fabrication process. The bias-temperature stress (BTS) test has been conducted on a-SiCN to investigate the barrier ability against copper penetration. We find that a-SiCN could sustain the stress of electric field up to 4 mV/cm at 150 °C. In addition, a-SiCN films with higher nitrogen concentration exhibit better barrier property against copper penetration. The SIMS spectra also have been used to monitor the distributions of copper after different BTS conditions, confirming our inference on leakage mechanism.

原文English
頁(從 - 到)632-637
頁數6
期刊Thin Solid Films
447-448
DOIs
出版狀態Published - 30 1月 2004
事件Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
持續時間: 28 4月 20022 5月 2002

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