Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation

Chandan Sharma, Nicola Modolo, Hsi-Han Chen, Yang-Yen Tseng, Shun-Wei Tang, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Tian-Li Wu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)


In this work, GaN-on-Si power Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) are irradiated through different regimes of cumulative γ-ray irradiation, namely 1, 2, 3, 4, and 5 kGy for the first sample; 1, 3, and 5 kGy for the second sample; 1, 5, and 10 kGy for the third sample; and 1, 10, and 20 kGy for the fourth sample. After each irradiation dose, drain current (ID), threshold voltage (VTh), and gate leakage current (Ig) are electrically characterized in all the samples. An improvement in ID with a shift in VTh is observed in all the samples, which saturates after a higher irradiation dose. X-ray photoelectron spectroscopy (XPS) analysis confirms creation of nitrogen vacancies that act as donor and improves the ID. No significant change in Ig is observed except for an increase in noise in gate leakage current. Scanning electron microscopy (SEM) shows the Al-based metallization pad degrades due to formation of small cavities. Finally, energy dispersive X-ray (EDX) analysis confirms the formation of Al native oxides due to γ-ray irradiation.
期刊Microelectronics Reliability
出版狀態Published - 23 9月 2019
事件30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Toulouse, France
持續時間: 23 9月 201926 9月 2019


深入研究「Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation」主題。共同形成了獨特的指紋。