Investigation of static noise margin of ultra-thin-body SOI SRAM cells in subthreshold region using analytical solution of poisson's equation

Pi-Ho Hu*, Yu Sheng Wu, Ming Long Fan, Pin Su, Ching-Te Chuang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This paper investigates the Static Noise Margin (SNM) of Ultra-Thin-Body (UTB) SOI SRAM cells operating in subthreshold region using analytical solution of Poisson's equation validated with TCAD simulations. An analytical SNM model for UTB SOI SRAM cells operating in subthreshold region is presented. Our results indicate that back-gate bias (Vbg) can mitigate the Read SNM (RSNM) variability of UTB SOI SRAM cells in the subthreshold region, and the improvement of SNM variability is more significant than superthreshold region. Increasing cell β-ratio shows limited improvement on RSNM and has no benefit on SNM variability for subthreshold operation. The UTB SOI 8T SRAM cell exhibits RSNM 2X larger than the 6T SRAM cell in subthreshold region.

原文English
主出版物標題2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
發行者IEEE
頁面115-116
頁數2
ISBN(列印)9781424427857
DOIs
出版狀態Published - 2009
事件2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, 台灣
持續時間: 27 4月 200929 4月 2009

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
國家/地區台灣
城市Hsinchu
期間27/04/0929/04/09

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