Investigation of static noise margin of FinFET SRAM cells in sub-threshold region

Ming Long Fan*, Yu Sheng Wu, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

*此作品的通信作者

    研究成果: Conference contribution同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    This paper investigates the Static Noise Margin (SNM) of FinFET SRAM cells operating in sub-threshold region using analytical solution of 3D Poisson's equation. An analytical SNM model for sub-threshold FinFET SRAM is demonstrated and validated by TCAD mixed-mode simulations. The stabilities of several novel independently controlled-gate FinFET SRAM cells are examined. Significant nominal RSNM improvements are observed in these novel cells. However, Write-ability is degraded and becomes an important concern for certain configurations in sub-threshold region. Our result indicates that R/W word-line (WL) voltage control technique is more effective than transistor sizing for improving the Write-ability of the FinFET sub-threshold SRAM. While 6T cell is not a viable candidate for sub-threshold SRAM and 8T/10T cells must be used in bulk CMOS, our analysis establishes the feasibility and viability of 6T FinFET cells for sub-threshold SRAM applications.

    原文English
    主出版物標題2009 IEEE International SOI Conference
    DOIs
    出版狀態Published - 28 12月 2009
    事件2009 IEEE International SOI Conference - Foster City, CA, 美國
    持續時間: 5 10月 20098 10月 2009

    出版系列

    名字Proceedings - IEEE International SOI Conference
    ISSN(列印)1078-621X

    Conference

    Conference2009 IEEE International SOI Conference
    國家/地區美國
    城市Foster City, CA
    期間5/10/098/10/09

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