Investigation of safe operating area and behavior of unclamped inductive switching on 4H-SiC VDMOSFET

Keyphrases

• 4H-SiC 100%
• Area Characteristic 20%
• Electrical Behavior 20%
• Fall Time 20%
• Gate Bias 20%
• Gate Resistance 20%
• Holding Voltage 20%
• I-V Curve 60%
• Inductors 20%
• MOSFET 100%
• Operating Behavior 100%
• Parasitic BJT 20%
• Peak Voltage 20%
• Pulse Test 40%
• Pulse Width 20%
• Pulsed I-V 60%
• Ruggedness 20%
• Safe Operating Space 100%
• Self-heating Effect 20%
• Snapback Effect 20%
• Switching Test 40%
• Transmission Line Pulse 100%
• Unclamped Inductive Switching 100%

Engineering

• Bipolar Transistor 20%
• Current-Voltage Characteristic 60%
• Electric Lines 100%
• Gate Bias 20%
• Heating Effect 20%
• Holding Voltage 20%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Operating Area 100%
• Pulse Duration 20%
• Pulse Test 40%