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Investigation of safe operating area and behavior of unclamped inductive switching on 4H-SiC VDMOSFET
Chao Yang Ke,
Ming Dou Ker
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此作品的通信作者
電子研究所
神經調控醫療電子系統研究中心
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Keyphrases
MOSFET
100%
Transmission Line Pulse
100%
Safe Operating Space
100%
4H-SiC
100%
Unclamped Inductive Switching
100%
Operating Behavior
100%
I-V Curve
60%
Pulsed I-V
60%
Pulse Test
40%
Switching Test
40%
Inductors
20%
Parasitic BJT
20%
Gate Bias
20%
Pulse Width
20%
Fall Time
20%
Electrical Behavior
20%
Peak Voltage
20%
Snapback Effect
20%
Holding Voltage
20%
Self-heating Effect
20%
Gate Resistance
20%
Ruggedness
20%
Area Characteristic
20%
Engineering
Electric Lines
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Operating Area
100%
Current-Voltage Characteristic
60%
Pulse Test
40%
Bipolar Transistor
20%
Gate Bias
20%
Heating Effect
20%
Holding Voltage
20%
Pulse Duration
20%