Investigation of radiation hardness of HfO2 resistive random access memory

Bing-Yue Tsui, Ko Chin Chang, Bor Yuan Shew, Heng Yuan Lee, Ming Jinn Tsai

    研究成果: Conference contribution同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    Radiation hardness of HfO2-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray as radiation source. The low-resistance state (LRS) is immune to irradiation, but temporary change of the high-resistance state (HRS) and endurance degradation could be observed at high total irradiation dose (TID). A physical model is proposed to explain these observations. It is concluded that the HfO2-based RRAM can be operated in high radiation environment, and EUV can be use to fabricate high-density RRAM array.

    原文English
    主出版物標題Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
    發行者IEEE Computer Society
    ISBN(列印)9781479922178
    DOIs
    出版狀態Published - 1 1月 2014
    事件2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
    持續時間: 28 4月 201430 4月 2014

    出版系列

    名字Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

    Conference

    Conference2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
    國家/地區Taiwan
    城市Hsinchu
    期間28/04/1430/04/14

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