Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge De-trapping

C. T. Chan; H. C. Ma; C. J. Tang; Ta-Hui Wang

doi:10.1109/.2005.1469224

Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge De-trapping

C. T. Chan^*, H. C. Ma, C. J. Tang, Ta-Hui Wang

^*此作品的通信作者

研究成果: Conference article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

A novel method to study post-NBTI stress recovery in pMOSFETs is demonstrated by direct measurement of single-hole de-trapping behavior. Individual trapped hole emission in NBTI recovery is observed for the first time, which is manifested by the step-like evolution of channel current. By measuring trapped hole emission times and corresponding current jump, the dependence of NBTI recovery on stress hardness, recovery gate voltage and temperature, and gate length is characterized. An analytical model based on thermally-assisted tunneling of trapped oxide charges can successfully reproduce measured recovery characteristics.

原文	English
文章編號	1469224
頁（從 - 到）	90-91
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
卷	2005
DOIs	https://doi.org/10.1109/.2005.1469224
出版狀態	Published - 2005
事件	2005 Symposium on VLSI Technology - Kyoto, 日本持續時間: 14 6月 2005 → 14 6月 2005

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@article{a19f53df62e344b399c931c252735ed8,

title = "Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge De-trapping",

abstract = "A novel method to study post-NBTI stress recovery in pMOSFETs is demonstrated by direct measurement of single-hole de-trapping behavior. Individual trapped hole emission in NBTI recovery is observed for the first time, which is manifested by the step-like evolution of channel current. By measuring trapped hole emission times and corresponding current jump, the dependence of NBTI recovery on stress hardness, recovery gate voltage and temperature, and gate length is characterized. An analytical model based on thermally-assisted tunneling of trapped oxide charges can successfully reproduce measured recovery characteristics.",

keywords = "NBTI, Recovery, Single charge de-trapping, Thermally-assisted tunneling",

author = "Chan, {C. T.} and Ma, {H. C.} and Tang, {C. J.} and Ta-Hui Wang",

year = "2005",

doi = "10.1109/.2005.1469224",

language = "English",

volume = "2005",

pages = "90--91",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 Symposium on VLSI Technology ; Conference date: 14-06-2005 Through 14-06-2005",

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TY - JOUR

T1 - Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge De-trapping

AU - Chan, C. T.

AU - Ma, H. C.

AU - Tang, C. J.

AU - Wang, Ta-Hui

PY - 2005

Y1 - 2005

N2 - A novel method to study post-NBTI stress recovery in pMOSFETs is demonstrated by direct measurement of single-hole de-trapping behavior. Individual trapped hole emission in NBTI recovery is observed for the first time, which is manifested by the step-like evolution of channel current. By measuring trapped hole emission times and corresponding current jump, the dependence of NBTI recovery on stress hardness, recovery gate voltage and temperature, and gate length is characterized. An analytical model based on thermally-assisted tunneling of trapped oxide charges can successfully reproduce measured recovery characteristics.

AB - A novel method to study post-NBTI stress recovery in pMOSFETs is demonstrated by direct measurement of single-hole de-trapping behavior. Individual trapped hole emission in NBTI recovery is observed for the first time, which is manifested by the step-like evolution of channel current. By measuring trapped hole emission times and corresponding current jump, the dependence of NBTI recovery on stress hardness, recovery gate voltage and temperature, and gate length is characterized. An analytical model based on thermally-assisted tunneling of trapped oxide charges can successfully reproduce measured recovery characteristics.

KW - NBTI

KW - Recovery

KW - Single charge de-trapping

KW - Thermally-assisted tunneling

UR - http://www.scopus.com/inward/record.url?scp=33646059101&partnerID=8YFLogxK

U2 - 10.1109/.2005.1469224

DO - 10.1109/.2005.1469224

M3 - Conference article

AN - SCOPUS:33646059101

SN - 0743-1562

VL - 2005

SP - 90

EP - 91

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469224

T2 - 2005 Symposium on VLSI Technology

Y2 - 14 June 2005 through 14 June 2005

ER -

Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge De-trapping

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