Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

Yu Xin Wen*, Chia Hua Wang, Yi Kai Hsiao, Chia Lung Hung, Bing Yue Tsui

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO2 interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (Nit) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep Nit down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.

原文English
主出版物標題WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350337112
DOIs
出版狀態Published - 2023
事件2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, Taiwan
持續時間: 27 8月 202329 8月 2023

出版系列

名字WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區Taiwan
城市Hsinchu
期間27/08/2329/08/23

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