Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

Yu Xin Wen; Chia Hua Wang; Yi Kai Hsiao; Chia Lung Hung; Bing Yue Tsui

doi:10.1109/WiPDAAsia58218.2023.10261894

Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

Yu Xin Wen^*, Chia Hua Wang, Yi Kai Hsiao, Chia Lung Hung, Bing Yue Tsui

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電子研究所

研究成果: Conference contribution › 同行評審

摘要

Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO₂ interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (N_it) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep N_it down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.

原文	English
主出版物標題	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350337112
DOIs	https://doi.org/10.1109/WiPDAAsia58218.2023.10261894
出版狀態	Published - 2023
事件	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 - Hsinchu, 台灣持續時間: 27 8月 2023 → 29 8月 2023

出版系列

名字	WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

Conference

Conference	2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023
國家/地區	台灣
城市	Hsinchu
期間	27/08/23 → 29/08/23

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10.1109/WiPDAAsia58218.2023.10261894

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Link to publication in Scopus

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Wen, Y. X., Wang, C. H., Hsiao, Y. K., Hung, C. L., & Tsui, B. Y. (2023). Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. 於 WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia58218.2023.10261894

Wen, Yu Xin ; Wang, Chia Hua ; Hsiao, Yi Kai 等. / Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

@inproceedings{54b3e591731d4791adfb8382792ec738,

title = "Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C",

abstract = "Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO2 interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (Nit) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep Nit down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.",

keywords = "deep interface states, near-interface oxide traps, Poole-Frenkel emission, positive bias temperature instability, Silicon carbide, trap-assisted tunneling",

author = "Wen, {Yu Xin} and Wang, {Chia Hua} and Hsiao, {Yi Kai} and Hung, {Chia Lung} and Tsui, {Bing Yue}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",

year = "2023",

doi = "10.1109/WiPDAAsia58218.2023.10261894",

language = "English",

series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",

address = "美國",

}

Wen, YX, Wang, CH, Hsiao, YK, Hung, CL & Tsui, BY 2023, Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. 於 WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023, Hsinchu, 台灣, 27/08/23. https://doi.org/10.1109/WiPDAAsia58218.2023.10261894

Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. / Wen, Yu Xin; Wang, Chia Hua; Hsiao, Yi Kai 等.
WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

AU - Wen, Yu Xin

AU - Wang, Chia Hua

AU - Hsiao, Yi Kai

AU - Hung, Chia Lung

AU - Tsui, Bing Yue

PY - 2023

Y1 - 2023

N2 - Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO2 interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (Nit) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep Nit down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.

AB - Considerable effort has been devoted to studying the bias temperature instability (BTI) of SiC metal-oxidesemiconductor (MOS) devices to identify the effect of slower states from either charge trapping at SiC SiO2 interface or within gate insulator. However, since trap time constant related to both spatial or energy distribution, it's difficult to distinguish effects of interface states (Nit) and near-interface oxide traps (NITs). In this study, we evaluate the positive bias temperature instability (PBTI) of the gate oxide on 4 H-SiC up to 300° C and extract deep Nit down to EC-1.4 eV to identify the mechanism of PBTI of SiC MOS capacitors.

KW - deep interface states

KW - near-interface oxide traps

KW - Poole-Frenkel emission

KW - positive bias temperature instability

KW - Silicon carbide

KW - trap-assisted tunneling

UR - http://www.scopus.com/inward/record.url?scp=85174270248&partnerID=8YFLogxK

U2 - 10.1109/WiPDAAsia58218.2023.10261894

DO - 10.1109/WiPDAAsia58218.2023.10261894

M3 - Conference contribution

AN - SCOPUS:85174270248

T3 - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

BT - WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023

Y2 - 27 August 2023 through 29 August 2023

ER -

Wen YX, Wang CH, Hsiao YK, Hung CL, Tsui BY. Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C. 於 WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc. 2023. (WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia). doi: 10.1109/WiPDAAsia58218.2023.10261894

Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C

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