Investigation of photo-induced leakage on low-k hydrogen silsesquioxane for active matrix liquid crystal display technology

Po-Tsun Liu*, Bin Lin Liu, T. M. Tsai, C. W. Chen, T. C. Chang, You Lin Wu, J. K. Lee, Grace Chen, Eric Tsai, Joe Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Summary form only given. Flat panel liquid crystal display (LCD) has been received much interest due to its light weight, smaller volume, and large area when compared with the conventional cathode-ray-tube (CRT) display. Thin film transistors (TFTs) has been used as the driver and switch elements and become indispensable in active matrix LCD display. In the conventional TFT pixel design, due to using silicon nitride as a passivation layer, edges of the pixel electrodes are retracted from the gate and data signal lines to minimize the coupling capacitance which causes cross-talk and signal distortion. Thus, black matrix (BM) will cover relatively larger inactive areas, leading to a decreased aperture ratio. The adoption of low-dielectric-constant (low-k) films for TFT passivation layer can effectively increase the aperture ration of display matrix, reducing resistance-capacitance (RC) delay, exhibiting high optical transparency, and good planarization properties.

原文English
主出版物標題Digest of Papers - Microprocesses and Nanotechnology 2004
頁面202
頁數1
DOIs
出版狀態Published - 26 10月 2004
事件2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
持續時間: 26 10月 200429 10月 2004

出版系列

名字Digest of Papers - Microprocesses and Nanotechnology 2004

Conference

Conference2004 International Microprocesses and Nanotechnology Conference
國家/地區Japan
城市Osaka
期間26/10/0429/10/04

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