@inproceedings{c45d16023f7c425baf5aca2a612ad33e,
title = "Investigation of p-GaN Gate HEMT using Removal Si Substrate and part of Buffer Layer",
abstract = "Normally-off p-GaN gate high electron mobility transistor (HEMT) on Si substrate using the back-side via process was investigated. We removed the Si substrate and part of the GaN carbon-doped layer. A 100 nm thickness of SiO2 layer is deposited on the back-side via to obstruct the buffer leakage, and a 1um thick gold is electroplated to improve the self-heating effect. With and without the backside via process, the threshold voltages are 0.92 and 1.45 V, the on/off drain current ratios are 5×1010 and 5×108, the subthreshold swings are 154 and 224 mV/dec, the static on-resistances are 24.77 and 27.55 Ω.mm, and the dynamic on-resistance ratios are 1.18 and 1.3.",
keywords = "AlGaN/GaN, Back-side Via, Buffer Leakage, Dynamic on-Resistance, Local Removal Substrate, p-GaN gate HEMT",
author = "Y. Lin and Chiu, {Y. S.} and Chang, {E. Y.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022 ; Conference date: 14-10-2022 Through 16-10-2022",
year = "2022",
doi = "10.1109/IET-ICETA56553.2022.9971618",
language = "English",
series = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings - 2022 IET International Conference on Engineering Technologies and Applications, IET-ICETA 2022",
address = "United States",
}