Investigation of nonvolatile memory effect of organic thin-film transistors with triple dielectric layers

Hsin-Chieh Yu; Ying Chih Chen; Chun Yuan Huang; Yan Kuin Su

doi:10.1143/APEX.5.034101

Investigation of nonvolatile memory effect of organic thin-film transistors with triple dielectric layers

Hsin-Chieh Yu, Ying Chih Chen, Chun Yuan Huang, Yan Kuin Su^*

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔV _th, >20 V), switchable channel current, and long retention time.

原文	English
文章編號	034101
期刊	Applied Physics Express
卷	5
發行號	3
DOIs	https://doi.org/10.1143/APEX.5.034101
出版狀態	Published - 1 3月 2012

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AB - Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔV th, >20 V), switchable channel current, and long retention time.

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Investigation of nonvolatile memory effect of organic thin-film transistors with triple dielectric layers

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