@inproceedings{a709e72e3f6b4d1087aa45a4acb22e9d,
title = "Investigation of NH3Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs",
abstract = "In this study, hysteresis-free double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric field-effect transistors (DL GAA NS FeFETs) and NH3 plasma nitridation have been investigated and discussed. The NH3 plasma nitridation at both metal/oxide interfaces can effectively improve the HfxZr1-xO2 (HZO) ferroelectricity and quality by reducing the amount of oxygen vacancy (Vo) as well as enhance the SiON interfacial layer quality by passivating the bulk defects. Therefore, devices can show the most excellent electrical characteristics: 1) extremely low subthreshold swing (S.S.) 45.77 mV/decade, 2) high ON/OFF current ratio (ION/IOFF) > 5 × 107, and 3) high effective breakdown voltage (VEBD) 6.7 V at VD = 0.1 V. These devices are very promising candidates for the low-power-consumption monolithic 3-D integrated circuit (IC) applications.",
keywords = "FeFET, ferroelectricity, Gate-all-around (GAA), HfZrO(HZO), monolithic 3-D integrated circuit (IC), NHplasma nitridation, poly-Si, seed layer, stacked nanosheet (NS) channel",
author = "Hsieh, {Dong Ru} and Lee, {Chia Chin} and Hong, {Zi Yang} and Chao, {Tien Sheng}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",
year = "2022",
doi = "10.1109/EDTM53872.2022.9798318",
language = "English",
series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "24--26",
booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
address = "美國",
}