Investigation of NH3Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs

Dong Ru Hsieh, Chia Chin Lee, Zi Yang Hong, Tien Sheng Chao*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, hysteresis-free double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric field-effect transistors (DL GAA NS FeFETs) and NH3 plasma nitridation have been investigated and discussed. The NH3 plasma nitridation at both metal/oxide interfaces can effectively improve the HfxZr1-xO2 (HZO) ferroelectricity and quality by reducing the amount of oxygen vacancy (Vo) as well as enhance the SiON interfacial layer quality by passivating the bulk defects. Therefore, devices can show the most excellent electrical characteristics: 1) extremely low subthreshold swing (S.S.) 45.77 mV/decade, 2) high ON/OFF current ratio (ION/IOFF) > 5 × 107, and 3) high effective breakdown voltage (VEBD) 6.7 V at VD = 0.1 V. These devices are very promising candidates for the low-power-consumption monolithic 3-D integrated circuit (IC) applications.

原文English
主出版物標題6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面24-26
頁數3
ISBN(電子)9781665421775
DOIs
出版狀態Published - 2022
事件6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
持續時間: 6 3月 20229 3月 2022

出版系列

名字6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
國家/地區Japan
城市Virtual, Online
期間6/03/229/03/22

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