@inproceedings{ee6545151868499f860f13b7dd1a7e73,
title = "Investigation of Micron-scale Indium Gallium Nitride Light Emitting Diode with Atomic-Layer-Deposited Passivation",
abstract = "We fabricated and demonstrated 2-micron InGaN micro LEDs. The devices can work with ALD passivation and exhibit high quantum efficiencies. As high as 7.36% of quantum efficiency can be obtained in 100-micron devices. The current-dependent emission peak shift can be seen as an indicator of device's thermal issues.",
keywords = "Electro-optical waveguides, Indium gallium nitride, Lasers and electrooptics, Light emitting diodes, Next generation networking, Passivation",
author = "Chang, {Hao Jen} and Chiang, {Ke Hsi} and Jao, {Yu Ming} and Wang, {Yuan Chao} and Huang, {Jian Jang} and Kuo, {Hao Chung} and Lin, {Chien Chung}",
note = "Publisher Copyright: {\textcopyright} Optica Publishing Group 2024 {\textcopyright} 2024 The Author(s); 2024 Conference on Lasers and Electro-Optics, CLEO 2024 ; Conference date: 07-05-2024 Through 10-05-2024",
year = "2024",
doi = "10.1364/cleo_at.2024.atu4j.3",
language = "English",
series = "2024 Conference on Lasers and Electro-Optics, CLEO 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 Conference on Lasers and Electro-Optics, CLEO 2024",
address = "美國",
}