@inproceedings{36b1d9861cbb483f951785bc3992c72b,
title = "Investigation of Low Temperature Co-Co Direct Bonding and Co-Passivated Cu-Cu Direct Bonding",
abstract = "The emerging interconnect material, Co, has been investigated as metal bonding material in this work. The Co-Co direct bonding has been successfully developed at both chip-level and wafer-level with excellent bonding results, including good bonding interface, strong mechanical strength, and high electrical performance. The behavior of inter-diffusion between Co bonding layers could be verified by the TEM/EDX analyses. Moreover, the post-bonding annealing process has been discussed, showing the negligible influence on Co-Co bonding. Finally, Co has been successfully developed as a metal passivation layer to achieve a low temperature Cu bonding process at 200°C. The achievements reported in this paper explore the applications of next-generation interconnect materials in 3D IC technologies.",
keywords = "Co bonding, Co passivation, Cu bonding, metal bonding",
author = "Demin Liu and Mei, {Kuan Chun} and Hu, {Han Wen} and Tsai, {Yi Chieh} and Cheng, {Huang Chung} and Chen, {Kuan Neng}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 72nd IEEE Electronic Components and Technology Conference, ECTC 2022 ; Conference date: 31-05-2022 Through 03-06-2022",
year = "2022",
doi = "10.1109/ECTC51906.2022.00040",
language = "English",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "187--193",
booktitle = "Proceedings - IEEE 72nd Electronic Components and Technology Conference, ECTC 2022",
address = "United States",
}