Investigation of low frequency noise in uniaxial strained PMOSFETs

Jack J Y Kuo; William P N Chen; Pin Su

doi:10.1109/VTSA.2009.5159301

Investigation of low frequency noise in uniaxial strained PMOSFETs

Jack J Y Kuo, William P N Chen, Pin Su

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |V_gst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the S_Id/I _d² is increased by the enhanced g_m/I _d for the strained device. Nevertheless, the S_Id/I _d² of the strained device is almost the same as the unstrained one at a given g_m/I_d. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller S_Vg. In the high |V_gst| regime, the 1/f noise is dominated by the mobility-fluctuations and the S_Id/I_d² is increased due to the larger Hooge parameter for the strained device.

原文	English
主出版物標題	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
頁面	82-83
頁數	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159301
出版狀態	Published - 1 12月 2009
事件	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, 台灣持續時間: 27 4月 2009 → 29 4月 2009

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
國家/地區	台灣
城市	Hsinchu
期間	27/04/09 → 29/04/09

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10.1109/VTSA.2009.5159301

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title = "Investigation of low frequency noise in uniaxial strained PMOSFETs",

abstract = "We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/I d2 is increased by the enhanced gm/I d for the strained device. Nevertheless, the SId/I d2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller SVg. In the high |Vgst| regime, the 1/f noise is dominated by the mobility-fluctuations and the SId/Id2 is increased due to the larger Hooge parameter for the strained device.",

author = "Kuo, {Jack J Y} and Chen, {William P N} and Pin Su",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/VTSA.2009.5159301",

language = "English",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "82--83",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",

}

Kuo, JJY, Chen, WPN & Su, P 2009, Investigation of low frequency noise in uniaxial strained PMOSFETs. 於 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159301, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 頁 82-83, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, 台灣, 27/04/09. https://doi.org/10.1109/VTSA.2009.5159301

TY - GEN

T1 - Investigation of low frequency noise in uniaxial strained PMOSFETs

AU - Kuo, Jack J Y

AU - Chen, William P N

AU - Su, Pin

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/I d2 is increased by the enhanced gm/I d for the strained device. Nevertheless, the SId/I d2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller SVg. In the high |Vgst| regime, the 1/f noise is dominated by the mobility-fluctuations and the SId/Id2 is increased due to the larger Hooge parameter for the strained device.

AB - We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/I d2 is increased by the enhanced gm/I d for the strained device. Nevertheless, the SId/I d2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application of uniaxial compressive strain, the attenuation length λ is reduced because of the increased out-on-plane effective mass and tunneling barrier height. The reduced λ may result in a smaller SVg. In the high |Vgst| regime, the 1/f noise is dominated by the mobility-fluctuations and the SId/Id2 is increased due to the larger Hooge parameter for the strained device.

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U2 - 10.1109/VTSA.2009.5159301

DO - 10.1109/VTSA.2009.5159301

M3 - Conference contribution

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SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

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BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

T2 - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

Y2 - 27 April 2009 through 29 April 2009

ER -

Investigation of low frequency noise in uniaxial strained PMOSFETs

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