Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

Shih En Huang, Shih Han Lin, Pin Su*

*此作品的通信作者

研究成果: Article同行評審

摘要

This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In0.53Ga0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversioncharge boosting for the In0.53Ga0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In0.53Ga0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.

原文English
文章編號8959139
頁(從 - 到)105-109
頁數5
期刊IEEE Journal of the Electron Devices Society
8
DOIs
出版狀態Published - 14 一月 2020

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