Investigation of Intrinsic Ferroelectric Switching induced Variation for Scaled FeFETs considering Limited Domain Number

Keyphrases

• Memory Window 100%
• Induced Variation 100%
• Ferroelectric Switching 100%
• Ferroelectric Field-effect Transistor (FeFET) 100%
• Limited Domain 100%
• Non-volatile Memory 50%
• Equivalent Oxide Thickness 25%
• High Density 25%
• Monte Carlo Simulation 25%
• Polarization Charge 25%
• Switching Model 25%
• Nucleation-limited Switching 25%

Engineering

• Field-Effect Transistor 100%
• Nonvolatile Memory 66%
• Oxide Thickness 33%
• Interlayer 33%
• Mean Value 33%

Material Science

• Ferroelectric Material 100%
• Field Effect Transistor 50%
• Density 16%
• Nucleation 16%
• Oxide Compound 16%