Investigation of Intrinsic Ferroelectric Switching induced Variation for Scaled FeFETs considering Limited Domain Number

Yi Chin Luo, Pin Su

研究成果: Conference contribution同行評審

摘要

In this work, using Monte-Carlo simulations with nucleation-limited-switching (NLS) model, we investigate the intrinsic ferroelectric switching induced variation for scaled ferroelectric field-effect-transistor (FeFET) nonvolatile memory (NVM) with limited domain number. Our study suggests that, for a given mean value of memory window (MW), adequately reducing the saturated polarization (Ps) of the ferroelectric can mitigate the variability in MW because the impact of polarization charges from each domain flipping can be reduced. In addition, the impacts of other factors such as the equivalent oxide thickness of the interlayer layer on the mean MW and the variability in MW for the FeFET NVM will also be discussed. Our study may provide insights for future high-density FeFET design.

原文English
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665409230
DOIs
出版狀態Published - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, 台灣
持續時間: 18 4月 202221 4月 2022

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區台灣
城市Hsinchu
期間18/04/2221/04/22

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