Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories

Lung En Chang; You Sheng Liu; Pin Su

doi:10.1109/SNW56633.2022.9889038

Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories

Lung En Chang, You Sheng Liu, Pin Su

研究成果: Conference contribution › 同行評審

摘要

This work investigates the interfacial-layer (IL) surface roughness induced random variation in scaled 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that the IL surface roughness variation may significantly impact the FeFET NVM, and the variability in memory window (MW) increases as the gate length is scaled down. We have also compared the IL surface roughness induced variation for 2D FeFETs and Si FeFETs. Besides, we have demonstrated that using high-k spacer design can mitigate the IL surface roughness induced variation in addition to raising the MW. The impact of high-k spacers increases with the downscaling of gate length.

原文	English
主出版物標題	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665459792
DOIs	https://doi.org/10.1109/SNW56633.2022.9889038
出版狀態	Published - 2022
事件	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 - Honolulu, 美國持續時間: 11 6月 2022 → 12 6月 2022

出版系列

名字	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Conference

Conference	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
國家/地區	美國
城市	Honolulu
期間	11/06/22 → 12/06/22

存取文件

10.1109/SNW56633.2022.9889038

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Link to publication in Scopus

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Chang, L. E., Liu, Y. S., & Su, P. (2022). Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories. 於 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW56633.2022.9889038

@inproceedings{d2ca1fabf5124ce5a39642cee6362161,

title = "Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories",

abstract = "This work investigates the interfacial-layer (IL) surface roughness induced random variation in scaled 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that the IL surface roughness variation may significantly impact the FeFET NVM, and the variability in memory window (MW) increases as the gate length is scaled down. We have also compared the IL surface roughness induced variation for 2D FeFETs and Si FeFETs. Besides, we have demonstrated that using high-k spacer design can mitigate the IL surface roughness induced variation in addition to raising the MW. The impact of high-k spacers increases with the downscaling of gate length.",

author = "Chang, {Lung En} and Liu, {You Sheng} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 ; Conference date: 11-06-2022 Through 12-06-2022",

year = "2022",

doi = "10.1109/SNW56633.2022.9889038",

language = "English",

series = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

address = "美國",

}

Chang, LE, Liu, YS & Su, P 2022, Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories. 於 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Honolulu, 美國, 11/06/22. https://doi.org/10.1109/SNW56633.2022.9889038

Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories. / Chang, Lung En; Liu, You Sheng; Su, Pin.
2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories

AU - Chang, Lung En

AU - Liu, You Sheng

AU - Su, Pin

PY - 2022

Y1 - 2022

N2 - This work investigates the interfacial-layer (IL) surface roughness induced random variation in scaled 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that the IL surface roughness variation may significantly impact the FeFET NVM, and the variability in memory window (MW) increases as the gate length is scaled down. We have also compared the IL surface roughness induced variation for 2D FeFETs and Si FeFETs. Besides, we have demonstrated that using high-k spacer design can mitigate the IL surface roughness induced variation in addition to raising the MW. The impact of high-k spacers increases with the downscaling of gate length.

AB - This work investigates the interfacial-layer (IL) surface roughness induced random variation in scaled 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that the IL surface roughness variation may significantly impact the FeFET NVM, and the variability in memory window (MW) increases as the gate length is scaled down. We have also compared the IL surface roughness induced variation for 2D FeFETs and Si FeFETs. Besides, we have demonstrated that using high-k spacer design can mitigate the IL surface roughness induced variation in addition to raising the MW. The impact of high-k spacers increases with the downscaling of gate length.

UR - http://www.scopus.com/inward/record.url?scp=85141076957&partnerID=8YFLogxK

U2 - 10.1109/SNW56633.2022.9889038

DO - 10.1109/SNW56633.2022.9889038

M3 - Conference contribution

AN - SCOPUS:85141076957

T3 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

BT - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Y2 - 11 June 2022 through 12 June 2022

ER -

Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories

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