TY - GEN
T1 - Investigation of Interlayer Surface Roughness induced Variation in Scaled 2D Ferroelectric-FET Nonvolatile Memories
AU - Chang, Lung En
AU - Liu, You Sheng
AU - Su, Pin
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This work investigates the interfacial-layer (IL) surface roughness induced random variation in scaled 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that the IL surface roughness variation may significantly impact the FeFET NVM, and the variability in memory window (MW) increases as the gate length is scaled down. We have also compared the IL surface roughness induced variation for 2D FeFETs and Si FeFETs. Besides, we have demonstrated that using high-k spacer design can mitigate the IL surface roughness induced variation in addition to raising the MW. The impact of high-k spacers increases with the downscaling of gate length.
AB - This work investigates the interfacial-layer (IL) surface roughness induced random variation in scaled 2D FeFET NVMs with the aid of TCAD atomistic simulations. Our study indicates that the IL surface roughness variation may significantly impact the FeFET NVM, and the variability in memory window (MW) increases as the gate length is scaled down. We have also compared the IL surface roughness induced variation for 2D FeFETs and Si FeFETs. Besides, we have demonstrated that using high-k spacer design can mitigate the IL surface roughness induced variation in addition to raising the MW. The impact of high-k spacers increases with the downscaling of gate length.
UR - http://www.scopus.com/inward/record.url?scp=85141076957&partnerID=8YFLogxK
U2 - 10.1109/SNW56633.2022.9889038
DO - 10.1109/SNW56633.2022.9889038
M3 - Conference contribution
AN - SCOPUS:85141076957
T3 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
BT - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Y2 - 11 June 2022 through 12 June 2022
ER -