TY - JOUR
T1 - Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts
AU - Chen, W. C.
AU - Su, Y. K.
AU - Chuang, R. W.
AU - Yu, Hsin-Chieh
AU - Chen, B. Y.
AU - Hsu, S. H.
PY - 2008/3/1
Y1 - 2008/3/1
N2 - Metal-semiconductor-metal photodetectors (MSM-PDs) with transparent ITO contacts were studied. The RF-sputtered ITO layers were formed under various ambient gases Ar, Ar/N2, and Ar/O2. The ITO film fabricated under the Ar/O2 ambient has highest Schottky barrier-height, but the high resistivity limited the photocurrent of the photodetectors. Consequently, using Ar/N2 as the plasma gas would be a suitable choice for MSM-PD application. The photo/dark current ratios of the MSM-PDs were 5, 25 and 12 (measured under 0.2 V) using Ar, Ar/N2 and Ar/O2 as the plasma gases. To further improve the photo/dark current ratio, we fabricated the InGaAN-PDs using metal-insulator-metal-semiconductor (MIMS) structures. The dark current was greatly suppressed by the SiO 2 layer, and the highest photo/dark current ratio was 66 under 0.2 V bias.
AB - Metal-semiconductor-metal photodetectors (MSM-PDs) with transparent ITO contacts were studied. The RF-sputtered ITO layers were formed under various ambient gases Ar, Ar/N2, and Ar/O2. The ITO film fabricated under the Ar/O2 ambient has highest Schottky barrier-height, but the high resistivity limited the photocurrent of the photodetectors. Consequently, using Ar/N2 as the plasma gas would be a suitable choice for MSM-PD application. The photo/dark current ratios of the MSM-PDs were 5, 25 and 12 (measured under 0.2 V) using Ar, Ar/N2 and Ar/O2 as the plasma gases. To further improve the photo/dark current ratio, we fabricated the InGaAN-PDs using metal-insulator-metal-semiconductor (MIMS) structures. The dark current was greatly suppressed by the SiO 2 layer, and the highest photo/dark current ratio was 66 under 0.2 V bias.
UR - http://www.scopus.com/inward/record.url?scp=42549144641&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/3/035027
DO - 10.1088/0268-1242/23/3/035027
M3 - Article
AN - SCOPUS:42549144641
SN - 0268-1242
VL - 23
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 3
M1 - 035027
ER -