Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs

Chang Ho Tseng*, Ting Kuo Chang, Fang Tsun Chu, Jia Min Shieh, Bau Tong Dai, Huang-Chung Cheng, Albert Chin

*此作品的通信作者

    研究成果: Letter同行評審

    16 引文 斯高帕斯(Scopus)

    摘要

    By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350°C to achieve excellent gate oxide integrity of low leakage current < 5 × 10-8 A/cm2 (at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5 × 1011/eV cm2. The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 μA/μm at VD = 1 V and VG = 5 V and the high electron field effect mobility of 231 cm2/V·s.

    原文English
    頁(從 - 到)333-335
    頁數3
    期刊IEEE Electron Device Letters
    23
    發行號6
    DOIs
    出版狀態Published - 1 六月 2002

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