@inproceedings{ca650a0e5d494dac80b2bdba7a29d466,
title = "Investigation of Impact Ionization from InxGa1-xAs to InAs channel HEMTs for high speed and low power applications",
abstract = "80-nm high electron mobility transistors (HEMTs) with different Indium content in InxGa1-xAs channel from 52%, 70% to 100% have been fabricated. Device performances degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8V (InAs/In0.7Ga0.3As), > 1V (In 0.7Ga0.3As) and > 1.5V (In0.52Ga 0.48As), respectively. The impact ionization phenomenon should be avoided for high speed, low power application because it limits the highest drain bias of the device which in turn limits the drift velocity under specific applied electric field.",
keywords = "HEMTs, Impact ionization, InAs-channel, InGaAs-channel",
author = "Kuo, {Chien I.} and Heng-Tung Hsu and Chang, {Edward Yi} and Chang, {Chia Ta} and Chang, {Chia Yuan} and Yasuyuki Miyamoto",
year = "2008",
doi = "10.1109/ICIPRM.2008.4702949",
language = "English",
isbn = "9781424422593",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
booktitle = "2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008",
note = "2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 ; Conference date: 25-05-2008 Through 29-05-2008",
}