Investigation of ICP parameters for smooth tsvs and following cu plating process in 3D integration

Cheng Hao Chiang, Yu Chen Hu, Kuo Hua Chen, Chi Tsung Chiu, Ching Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho Ming Tong, Kuan-Neng Chen*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.

原文English
主出版物標題2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
頁面56-59
頁數4
DOIs
出版狀態Published - 1 12月 2012
事件2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan
持續時間: 24 10月 201226 10月 2012

出版系列

名字Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN(列印)2150-5934
ISSN(電子)2150-5942

Conference

Conference2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
國家/地區Taiwan
城市Taipei
期間24/10/1226/10/12

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