@inproceedings{41543579d70b47c586a277b53764c349,
title = "Investigation of hot carrier reliability of ultrathin poly-Si nanobelt junctionless (UTNB-JL) transistors on different underlying insulators",
abstract = "In this work, we investigate the hot carrier stress (HCS) of ultrathin poly-Si nanobelt junctionless transistors on different insulator (TEOS and Si3N4). Time exponent n suggests the oxide trap charge is the dominant mechanism. The subthreshold slope (S.S.) is improved by acceptor-like interface states generated after HCS, and different S.S. improvement between JL-O and JL-N is caused by surface roughness of channel films resulting from nucleation during channel deposition in LPCVD step.",
keywords = "hot carrier, Junctionless, oxide charge, ultrathin channel",
author = "Chang, {Jen Hong} and Chung, {Chun Chih} and Lin, {Jer Yi} and Tien-Sheng Chao",
year = "2016",
month = aug,
day = "12",
doi = "10.1109/ISNE.2016.7543281",
language = "English",
series = "2016 5th International Symposium on Next-Generation Electronics, ISNE 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 5th International Symposium on Next-Generation Electronics, ISNE 2016",
address = "United States",
note = "null ; Conference date: 04-05-2016 Through 06-05-2016",
}