Investigation of Ge channel Complemental Field Effect Transistors (CFETs) Stacked Epitaxy or Layer Transfer

Tzu Chieh Hong, Yu Sin Ren, Chun Jung Su, Yao Jen Lee, Tien Sheng Chao

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This research aims to develop platform for Ge channel CFETs device fabrication. Double or higher density layered Ge film structure is required for Ge channel CFETs. Two different technique is investigated and discussed. Ge/Si/Ge stack epitaxy combined with wet selective etching provides a simplified platform with reasonable cost. While the developed layer transfer process provides higher flexibility and possibility. The combination of different orientation promoting n-type and p-type channel mobility respectively can be realized.

原文English
主出版物標題6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面244-246
頁數3
ISBN(電子)9781665421775
DOIs
出版狀態Published - 2022
事件6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
持續時間: 6 3月 20229 3月 2022

出版系列

名字6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
國家/地區Japan
城市Virtual, Online
期間6/03/229/03/22

指紋

深入研究「Investigation of Ge channel Complemental Field Effect Transistors (CFETs) Stacked Epitaxy or Layer Transfer」主題。共同形成了獨特的指紋。

引用此