@inproceedings{b53ca600e9944a1f94b295450e8039b2,
title = "Investigation of Ge channel Complemental Field Effect Transistors (CFETs) Stacked Epitaxy or Layer Transfer",
abstract = "This research aims to develop platform for Ge channel CFETs device fabrication. Double or higher density layered Ge film structure is required for Ge channel CFETs. Two different technique is investigated and discussed. Ge/Si/Ge stack epitaxy combined with wet selective etching provides a simplified platform with reasonable cost. While the developed layer transfer process provides higher flexibility and possibility. The combination of different orientation promoting n-type and p-type channel mobility respectively can be realized.",
keywords = "Complemental Field Effect Transistors (CFETs), Ge/Si Stacks, Layer Transfer and high channel mobility",
author = "Hong, {Tzu Chieh} and Ren, {Yu Sin} and Su, {Chun Jung} and Lee, {Yao Jen} and Chao, {Tien Sheng}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; null ; Conference date: 06-03-2022 Through 09-03-2022",
year = "2022",
doi = "10.1109/EDTM53872.2022.9798293",
language = "English",
series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "244--246",
booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
address = "United States",
}