Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

Shih En Huang, Chien Lin Yu, Pin Su*

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

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Keyphrases

Engineering

Material Science

Physics