Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect

Shih En Huang, Chien Lin Yu, Pin Su*

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

This paper investigates the fin-width (WFin) sensitivity of threshold voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to WFin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the VTsensitivity to WFinfor NC-FinFETs. Our study may provide insights for future scaling of FinFETs.

原文English
文章編號8689074
頁(從 - 到)2538-2543
頁數6
期刊IEEE Transactions on Electron Devices
66
發行號6
DOIs
出版狀態Published - 6月 2019

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