@inproceedings{c69aaa333f0244e18837532e6dc620e1,
title = "Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs/Si Channel Negative-Capacitance FinFETs",
abstract = "This work investigates the fin-width (WFin) sensitivity of threshold-voltage (VT) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretical quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that, due to the action of negative capacitance, the NC-FinFET can possess smaller VT sensitivity to WFin than the FinFET counterpart. Besides, the VT sensitivity to WFin can be further reduced with increasing dielectric constant of the spacer due to the increased internal voltage gain of the NC-FinFET.",
keywords = "CMOS, InGaAs, Negative capacitance FET",
author = "Huang, {Shih En} and Pin Su",
year = "2018",
month = jul,
day = "26",
doi = "10.1109/EDTM.2018.8421518",
language = "English",
isbn = "9781538637111",
series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "16--18",
booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",
address = "美國",
note = "2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",
}