Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson's equation

Pi-Ho Hu*, Yu Sheng Wu, Pin Su

*此作品的通信作者

    研究成果: Conference contribution同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (TBOX) and back-gate bias (V back-gate) on the electrostatic integrity of GeOI devices are also examined.

    原文English
    主出版物標題2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
    DOIs
    出版狀態Published - 2008
    事件2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, 中國
    持續時間: 8 12月 200810 12月 2008

    出版系列

    名字2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

    Conference

    Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
    國家/地區中國
    城市Hong Kong
    期間8/12/0810/12/08

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