摘要
This paper demonstrates, for the first time, the potential of using flip-chip packaging to connect multiple AlGaN/GaN high-electron-mobility transistors (HEMTs) in parallel for application in power electronics. The electrical and thermal properties of both the bare and the packaged devices were experimentally investigated via pulsed current-voltage (I-V) measurements. Compared to the bare die, less than one-fifth the thermal resistance (Rth), triple the output current, and one-third the on-resistance (Ron) with temperature insensibility were observed when three transistors were connected in parallel through flip-chip packaging. Superior performance such as this makes flip-chip packaging a potential technology for high power GaN electronic applications.
原文 | English |
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文章編號 | 034101 |
期刊 | Applied Physics Express |
卷 | 8 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 1 3月 2015 |