Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics

Szu Ping Tsai, Heng-Tung Hsu, Yung Yi Tu, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

This paper demonstrates, for the first time, the potential of using flip-chip packaging to connect multiple AlGaN/GaN high-electron-mobility transistors (HEMTs) in parallel for application in power electronics. The electrical and thermal properties of both the bare and the packaged devices were experimentally investigated via pulsed current-voltage (I-V) measurements. Compared to the bare die, less than one-fifth the thermal resistance (Rth), triple the output current, and one-third the on-resistance (Ron) with temperature insensibility were observed when three transistors were connected in parallel through flip-chip packaging. Superior performance such as this makes flip-chip packaging a potential technology for high power GaN electronic applications.

原文English
文章編號034101
期刊Applied Physics Express
8
發行號3
DOIs
出版狀態Published - 1 3月 2015

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