TY - JOUR
T1 - Investigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes with Cu/Invar/Cu Metal Substrates
AU - Sinha, Shreekant
AU - Tarntair, Fu Gow
AU - Ho, Cheng Han
AU - Wu, Yuh Renn
AU - Horng, Ray Hua
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2021/6
Y1 - 2021/6
N2 - This research studies the performance of n-side up thin-film AlGaInP-based vertical micro-light-emitting diodes (V- $\mu $ LEDs) with four different chip sizes, $100\times100$ , $70\times70$ , $50\times50$ , and $25\times 25\,\,\mu \text{m}^{2}$ , on a $50~\mu \text{m}$ thick composite metal (copper/Invar/copper; CIC) substrate. The LEDs were fabricated to understand the electrical and optical properties of AlGaInP V- $\mu $ LEDs as functions of chip sizes. For device performance, the small LEDs provide a larger current density under the same voltage and present smaller forward voltage, a low red-shift phenomenon, and low output power density. For the external quantum efficiency (EQE) of device, larger LEDs exhibit maximum EQE at lower current density as compared to smaller LEDs. The injection of a small current at the same current density obtains the emission image. The obtained data suggest that the smallest V- $\mu $ LEDs exude a sidewall effect that could impact the device performance.
AB - This research studies the performance of n-side up thin-film AlGaInP-based vertical micro-light-emitting diodes (V- $\mu $ LEDs) with four different chip sizes, $100\times100$ , $70\times70$ , $50\times50$ , and $25\times 25\,\,\mu \text{m}^{2}$ , on a $50~\mu \text{m}$ thick composite metal (copper/Invar/copper; CIC) substrate. The LEDs were fabricated to understand the electrical and optical properties of AlGaInP V- $\mu $ LEDs as functions of chip sizes. For device performance, the small LEDs provide a larger current density under the same voltage and present smaller forward voltage, a low red-shift phenomenon, and low output power density. For the external quantum efficiency (EQE) of device, larger LEDs exhibit maximum EQE at lower current density as compared to smaller LEDs. The injection of a small current at the same current density obtains the emission image. The obtained data suggest that the smallest V- $\mu $ LEDs exude a sidewall effect that could impact the device performance.
KW - AlGaInP
KW - copper/Invar/copper (CIC)
KW - vertical micro-light-emitting diodes (V-μLEDs)
UR - http://www.scopus.com/inward/record.url?scp=85105038706&partnerID=8YFLogxK
U2 - 10.1109/TED.2021.3073879
DO - 10.1109/TED.2021.3073879
M3 - Article
AN - SCOPUS:85105038706
SN - 0018-9383
VL - 68
SP - 2818
EP - 2822
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
M1 - 9418511
ER -