Investigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes with Cu/Invar/Cu Metal Substrates

Shreekant Sinha, Fu Gow Tarntair, Cheng Han Ho, Yuh Renn Wu, Ray Hua Horng*

*此作品的通信作者

    研究成果: Article同行評審

    摘要

    This research studies the performance of n-side up thin-film AlGaInP-based vertical micro-light-emitting diodes (V- $\mu $ LEDs) with four different chip sizes, $100\times100$ , $70\times70$ , $50\times50$ , and $25\times 25\,\,\mu \text{m}^{2}$ , on a $50~\mu \text{m}$ thick composite metal (copper/Invar/copper; CIC) substrate. The LEDs were fabricated to understand the electrical and optical properties of AlGaInP V- $\mu $ LEDs as functions of chip sizes. For device performance, the small LEDs provide a larger current density under the same voltage and present smaller forward voltage, a low red-shift phenomenon, and low output power density. For the external quantum efficiency (EQE) of device, larger LEDs exhibit maximum EQE at lower current density as compared to smaller LEDs. The injection of a small current at the same current density obtains the emission image. The obtained data suggest that the smallest V- $\mu $ LEDs exude a sidewall effect that could impact the device performance.

    原文English
    文章編號9418511
    頁(從 - 到)2818-2822
    頁數5
    期刊IEEE Transactions on Electron Devices
    68
    發行號6
    DOIs
    出版狀態Published - 六月 2021

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