Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices

Tzu Yueh Chang*, Szu Yuan Chen, Po-Tsung Lee

*此作品的通信作者

研究成果: Conference article同行評審

摘要

We investigate organic dynamic random access bistable devices with Al/Alq3/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we are able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.

原文English
頁(從 - 到)241-244
頁數4
期刊Digest of Technical Papers - SID International Symposium
38
發行號1
DOIs
出版狀態Published - 1 1月 2007
事件2007 SID International Symposium - Long Beach, CA, United States
持續時間: 23 5月 200725 5月 2007

指紋

深入研究「Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices」主題。共同形成了獨特的指紋。

引用此