Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses

Chih Yi Yang, Tian-Li Wu, Tin En Hsieh, Edward Yi Chang

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, we investigate the degradation phenomena in GaN-on-Si Metal-Insulator-Semiconductor High electron Mobility Transistors (MIS-HEMTs) in the cascode topography for enhancement mode power switching applications. Different stress conditions, e.g., constant source current (Is=100(μA)=2(mA/mm) and 100(nA)=2 × 10-3(mA/mm)) and drain voltages (Vd=1(V), 10(V), 100(V), and 200(V)), are used to investigate the source current and drain bias dependent degradation. First, the Vth shift is correlated with the Ron increase under a low drain bias stress (Vd<10(V)). However, under a high drain bias stress, the trapping location is most probably in the gate-to-drain access region, leading a different degradation phenomena compared to the case under a low drain bias stress. Furthermore, we found that the devices are stressed under a different source current stress show a similar degradation phenomenon. This suggests that, in the cascode circuit topology, the instability degradation is still mainly triggered by the drain bias.

原文English
主出版物標題2018 IEEE International Reliability Physics Symposium, IRPS 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面PWB.51-PWB.54
ISBN(電子)9781538654798
DOIs
出版狀態Published - 25 5月 2018
事件2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
持續時間: 11 3月 201815 3月 2018

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2018-March
ISSN(列印)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
國家/地區United States
城市Burlingame
期間11/03/1815/03/18

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