Investigation of Defect Engineering Toward Prolonged Endurance for HfZrO Based Ferroelectric Device

J. H. Lee*, C. H. Chou, P. J. Liao, Y. K. Chang, H. H. Huang, T. Y. Lin, Y. S. Liu, C. H. Nien, D. H. Hou, T. H. Hou, Jun He

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This paper reports the defect analyses of interfacial layer (IL) and HfZrO (HZO) stacks from high-endurance ferroelectric (FE) devices. Trap characterization for IL and HZO were evaluated by measuring frequency-dependent capacitance and flicker noise of leakage in IL and HZO respectively accompanied with simulation work on mechanism study. We validated the critical roles to enhance device endurance by (a) inserting optimized IL with fast de-trapping behavior and (b) doped-HZO with highly conductive grain boundary in metal-FE-semiconductor-metal (MFSM) and metal-FE-metal (MFM) stacks. In addition, a turn-around device lifetime corresponding to stress frequency was firstly reported on HZO FE devices, indicating improved de-trapping capabilities under higher frequency operation to achieve a longer device lifetime. In this work, we also demonstrated device with defect engineering in MFM stacks to achieve 5 × 1011 endurance-cycle under high frequency operation, which is promising for FE device application.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3261-3264
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

指紋

深入研究「Investigation of Defect Engineering Toward Prolonged Endurance for HfZrO Based Ferroelectric Device」主題。共同形成了獨特的指紋。

引用此